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| Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION General Description: 40 V 2 A (Super Low Ir) ELECTRICAL CHARACTERISTICS SYM DC Blocking Voltage: Ir=1mA(for wafer form) VRRM Ir=0.5mA (for dice form) Average Rectified Forward Current IFAV Maximum Instantaneous Forward Voltage @ 2 Amperes, Ta=25C VF MAX Maximum Instantaneous Reverse Voltage VR= 40 Volt, Ta=25C Maximum Junction Capacitance @ 0V, 1MHZ MAXIMUM RATINGS Nonrepetitive Peak Surge Current Operating Junction Temperature Storage Temperatures TYPE: SMBR240 Single Anode Spec. Limit 40 2 0.62 0.6 Die Sort UNIT 42.5 Volt Amp Volt IR MAX Cj MAX IFSM Tj TSTG 0.08 0.06 mA pF 45 -65 to +150 -65 to +150 Amp C C Specification apply to die only. Actual performance may degrade when assembled. MEMT does not guarantee device performance after assembly. Data sheet information is subjected to change without notice. DICE OUTLINE DRAWING DIM A B C D ITEM Die Size Top Metal Pad Size Passivation Seal Thickness (Min) Thickness (Max) um2 1245 1025 1203 254 305 Mil2 49.01 40.3 41.1 10 12 A C B Top-side Metal SiO2 Passivation P+ Guard Ring Back-side Metal PS: (1)Cutting street width is around 80um(3.14mil). (2)Both of top-side and back-side metals are Ti/Ni/Ag. D |
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